Power and Data Routing Structures for Organic Light-Emitting Diode Displays

ABSTRACT

An organic light-emitting diode display may have thin-film transistor circuitry formed on a substrate. The display and substrate may have rounded corners. A pixel definition layer may be formed on the thin-film transistor circuitry. Openings in the pixel definition layer may be provided with emissive material overlapping respective anodes for organic light-emitting diodes. A cathode layer may cover the array of pixels. A ground power supply path may be used to distribute a ground voltage to the cathode layer. The ground power supply path may be formed from a metal layer that is shorted to the cathode layer using portions of a metal layer that forms anodes for the diodes, may be formed from a mesh shaped metal pattern, may have L-shaped path segments, may include laser-deposited metal on the cathode layer, and may have other structures that facilitate distribution of the ground power supply.

This is a continuation of International Application PCT/US2017/014161,with an international filing date of Jan. 19, 2017, which claimspriority to U.S. Provisional Patent Application No. 62/281,602, filedJan. 21, 2016, and U.S. Provisional Patent Application No. 62/300,617,filed Feb. 26, 2016, which are hereby incorporated by reference hereinin their entireties.

BACKGROUND

This relates generally to electronic devices and, more particularly, toelectronic devices with organic light-emitting diode displays.

Electronic devices often include displays. For example, an electronicdevice may have an organic light-emitting diode display based onorganic-light-emitting diode pixels. Each pixel may have a pixel circuitthat includes a respective light-emitting diode. Thin-film transistorcircuitry in the pixel circuit may be used to control the application ofcurrent to the light-emitting diode in that pixel. The thin-filmtransistor circuitry may include a drive transistor. The drivetransistor and the light-emitting diode in a pixel circuit may becoupled in series between a positive power supply and a ground powersupply.

Signals in organic-light-emitting diode displays such as power supplysignals may be subject to undesired voltage drops due to resistivelosses in the conductive paths that are used to distribute thesesignals. If care is not taken, these voltage drops can interfere withsatisfactory operation of an organic light-emitting diode display.Challenges may also arise in distributing power and data signals indisplays having layouts in which signal routing space is limited.

It would therefore be desirable to be able to provide improve ways todistribute signals such as power supply and data signals on a displaysuch as an organic light-emitting diode display.

SUMMARY

An organic light-emitting diode display may have thin-film transistorcircuitry formed on a substrate. The display and substrate may haverounded corners. A pixel definition layer may be formed on the thin-filmtransistor circuitry. Openings in the pixel definition layer may beprovided with emissive material overlapping respective anodes fororganic light-emitting diodes.

A cathode layer may cover the array of pixels. A ground power supplypath may be used to distribute a ground voltage to the cathode layer.The ground power supply path may be formed from a metal layer that isshorted to the cathode layer using portions of a metal layer that formsthe anodes for the diodes, may be formed from a mesh shaped metalpattern, may have L-shaped path segments, may include laser-depositedmetal on the cathode layer, and may have other structures thatfacilitate distribution of the ground power supply. Mesh-shaped metalpatterns (e.g., a metal power supply mesh path), metal patterns withL-shaped path segments, and other structures may also be used tofacilitate distribution of positive power supply voltages. These powersupply path structures may accommodate displays and substrates withrounded corners.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of an illustrative electronic device having adisplay in accordance with an embodiment.

FIG. 2 is a diagram of an illustrative organic light-emitting diodepixel circuit in accordance with an embodiment.

FIG. 3 is a diagram of an illustrative organic light-emitting diodedisplay in accordance with an embodiment.

FIG. 4 is a cross-sectional side view of a portion of an active area ofan illustrative organic light-emitting diode display in accordance withan embodiment.

FIG. 5 is cross-sectional side view of a portion of an inactive borderarea of an illustrative organic light-emitting diode display inaccordance with an embodiment.

FIG. 6 is a diagram showing an illustrative mesh pattern that may beused for a ground power supply path in a display in accordance with anembodiment.

FIG. 7 is a diagram showing how the ground power supply path of FIG. 6may be used in a display with rounded corners in accordance with anembodiment.

FIGS. 8, 9, and 10 show illustrative power supply path layouts for adisplay with a flexible tail portion in accordance with an embodiment.

FIG. 11 is a top view of a corner portion of a display with positive andground power supply path structures in accordance with an embodiment.

FIGS. 12 and 13 are cross-sectional side views of portions of thedisplay of FIG. 11 in accordance with an embodiment.

FIG. 14 is a top view of a corner portion of a display with positive andground signal routing structures in accordance with another embodiment.

FIGS. 15, 16, and 17 are cross-sectional side views of portions of thedisplay of FIG. 14 in accordance with an embodiment.

FIG. 18 is a diagram of an illustrative display having power supplypaths formed from metal lines, mesh-shaped structures (e.g., a metalpower supply mesh path), and strip-shaped paths in accordance with anembodiment.

FIG. 19 is a diagram showing how a display may have data lines withstaircase-shaped portions to accommodate rounded display corners inaccordance with an embodiment.

FIG. 20 is a cross-sectional side view of layers in an illustrativeorganic light-emitting diode display in accordance with an embodiment.

FIG. 21 is a top view of an illustrative display with a mesh oflaser-deposited signal lines to reduce power supply voltage drops inaccordance with an embodiment.

FIG. 22 is a cross-sectional side view of a portion of the display ofFIG. 21 in accordance with an embodiment.

FIGS. 23 and 24 are cross-sectional side views of a portion of thedisplay of FIG. 21 during fabrication in accordance with an embodiment.

FIGS. 25, 26, 27, and 28 are top views of illustrative patterns that maybe used for paths such as laser-deposited signal lines in a display suchas the display of FIG. 21 in accordance with an embodiment.

FIG. 29 is a diagram of illustrative gate driver circuitry formed fromthin-film transistor circuitry on a display substrate in accordance withan embodiment.

FIG. 30 is a diagram of an illustrative display showing how gate driverrow blocks may be laterally offset and rotated to accommodate displaysubstrates with curved edges in accordance with an embodiment.

FIG. 31 is a diagram of an illustrative display showing how data lineextensions that overlap an active area of a display may be used to routesignals from diagonal data line segments to vertical portions of datalines in accordance with an embodiment.

FIG. 32 is a diagram showing how display driver circuitry such as gatedriver row blocks may have different shapes in different rows toaccommodate curved display substrate edges in accordance with anembodiment.

FIG. 33 is a diagram of illustrative display testing multiplexercircuitry of the type that may be formed from a portion of the thin-filmtransistor circuitry on a display substrate in accordance with anembodiment.

FIG. 34 is a diagram of an illustrative display showing how test signalsmay be routed between test pads at a lower edge of the display totesting multiplexer circuitry along an upper edge of the display inaccordance with an embodiment.

FIG. 35 is a diagram of an illustrative display showing how testingmultiplexer circuitry and test pads may be located along a portion of adisplay substrate tail on a lower edge of the display in accordance withan embodiment.

FIGS. 36 and 37 are diagrams of illustrative displays in which testingcircuitry is arranged to accommodate a curved display substrate edge inaccordance with embodiments.

DETAILED DESCRIPTION

An illustrative electronic device of the type that may be provided withan organic light-emitting diode display is shown in FIG. 1. Electronicdevice 10 may be a computing device such as a laptop computer, acomputer monitor containing an embedded computer, a tablet computer, acellular telephone, a media player, or other handheld or portableelectronic device, a smaller device such as a wrist-watch device, apendant device, a headphone or earpiece device, a device embedded ineyeglasses or other equipment worn on a user's head, or other wearableor miniature device, a display, a computer display that contains anembedded computer, a computer display that does not contain an embeddedcomputer, a gaming device, a navigation device, an embedded system suchas a system in which electronic equipment with a display is mounted in akiosk or automobile, or other electronic equipment.

As shown in FIG. 1, electronic device 10 may have control circuitry 16.Control circuitry 16 may include storage and processing circuitry forsupporting the operation of device 10. The storage and processingcircuitry may include storage such as hard disk drive storage,nonvolatile memory (e.g., flash memory or otherelectrically-programmable-read-only memory configured to form a solidstate drive), volatile memory (e.g., static or dynamicrandom-access-memory), etc. Processing circuitry in control circuitry 16may be used to control the operation of device 10. The processingcircuitry may be based on one or more microprocessors, microcontrollers,digital signal processors, baseband processors, power management units,audio chips, application specific integrated circuits, etc.

Input-output circuitry in device 10 such as input-output devices 12 maybe used to allow data to be supplied to device 10 and to allow data tobe provided from device 10 to external devices. Input-output devices 12may include buttons, joysticks, scrolling wheels, touch pads, key pads,keyboards, microphones, speakers, tone generators, vibrators, cameras,sensors, light-emitting diodes and other status indicators, data ports,etc. A user can control the operation of device 10 by supplying commandsthrough input-output devices 12 and may receive status information andother output from device 10 using the output resources of input-outputdevices 12.

Input-output devices 12 may include one or more displays such as display14. Display 14 may be a touch screen display that includes a touchsensor for gathering touch input from a user or display 14 may beinsensitive to touch. A touch sensor for display 14 may be based on anarray of capacitive touch sensor electrodes, acoustic touch sensorstructures, resistive touch components, force-based touch sensorstructures, a light-based touch sensor, or other suitable touch sensorarrangements. A touch sensor for display 14 may be formed fromelectrodes formed on a common display substrate with the pixels ofdisplay 14 or may be formed from a separate touch sensor panel thatoverlaps the pixels of display 14. If desired, display 14 may beinsensitive to touch (i.e., the touch sensor may be omitted).

Control circuitry 16 may be used to run software on device 10 such asoperating system code and applications. During operation of device 10,the software running on control circuitry 16 may display images ondisplay 14.

Display 14 may be an organic light-emitting diode display. In an organiclight-emitting diode display, each pixel contains a respective organiclight-emitting diode. A schematic diagram of an illustrative organiclight-emitting diode pixel is shown in FIG. 2. As shown in FIG. 2,display pixel 22 may include light-emitting diode 38. A positive powersupply voltage ELVDD may be supplied to positive power supply terminal34 and a ground power supply voltage ELVSS may be supplied to groundpower supply terminal 36. Diode 38 has an anode (terminal AN) and acathode (terminal CD). The state of drive transistor 32 controls theamount of current flowing through diode 38 and therefore the amount ofemitted light 40 from display pixel 22. Cathode CD of diode 38 iscoupled to ground terminal 36, so cathode terminal CD of diode 38 maysometimes be referred to as the ground terminal for diode 38.

To ensure that transistor 32 is held in a desired state betweensuccessive frames of data, display pixel 22 may include a storagecapacitor such as storage capacitor Cst. A first terminal of storagecapacitor Cst may be coupled to the gate of transistor 32 at node A anda second terminal of storage capacitor Cst may be coupled to anode AN ofdiode 38 at node B. The voltage on storage capacitor Cst is applied tothe gate of transistor 32 at node A to control transistor 32. Data canbe loaded into storage capacitor Cst using one or more switchingtransistors such as switching transistor 30. When switching transistor30 is off, data line D is isolated from storage capacitor Cst and thegate voltage on node A is equal to the data value stored in storagecapacitor Cst (i.e., the data value from the previous frame of displaydata being displayed on display 14). When gate line G (sometimesreferred to as a scan line) in the row associated with display pixel 22is asserted, switching transistor 30 will be turned on and a new datasignal on data line D will be loaded into storage capacitor Cst. The newsignal on capacitor Cst is applied to the gate of transistor 32 at nodeA, thereby adjusting the state of transistor 32 and adjusting thecorresponding amount of light 40 that is emitted by light-emitting diode38.

If desired, the circuitry for controlling the operation oflight-emitting diodes for pixels 22 in display 14 (e.g., transistors,capacitors, etc. in display pixel circuits such as the display pixelcircuit of FIG. 2) may be formed using configurations other than theconfiguration of FIG. 2 (e.g., configurations that include circuitry forcompensating for threshold voltage variations in drive transistor 32,configurations in which an emission enable transistor is coupled inseries with drive transistor 32, configurations with multiple switchingtransistors controlled by multiple respective scan lines, configurationswith multiple capacitors, etc.). The circuitry of pixel 22 of FIG. 2 ismerely illustrative.

As shown in FIG. 3, display 14 may include layers such as substratelayer 24. Substrate 24 and, if desired, other layers in display 14, maybe formed from layers of material such as glass layers, polymer layers(e.g., flexible sheets of polyimide or other flexible polymers), etc.Substrate 24 may be planar and/or may have one or more curved portions.Substrate 24 may have a rectangular shape with left and right verticaledges and upper and lower horizontal edges or may have a non-rectangularshape. In configurations in which substrate 24 has a rectangular shapewith four corners, the corners may, if desired, be rounded. Displaysubstrate 24 may, if desired, have a tail portion such as tail 24T.

Display 14 may have an array of pixels 22. Pixels 22 form an active areaAA of display 14 that displays images for a user. Inactive borderportions of display 14 such as inactive areas IA along one or more ofthe edges of substrate 24 do not contain pixels 22 and do not displayimages for the user (i.e., inactive area IA is free of pixels 22).

Each pixel 22 may have a light-emitting diode such as organiclight-emitting diode 38 of FIG. 2 and associated thin-film transistorcircuitry (e.g., the pixel circuit of FIG. 2 or other suitable pixelcircuitry). The array of pixels 22 may be formed from rows and columnsof pixel structures (e.g., pixels formed from structures on displaylayers such as substrate 24). There may be any suitable number of rowsand columns in the array of pixels 22 (e.g., ten or more, one hundred ormore, or one thousand or more). Display 14 may include pixels 22 ofdifferent colors. As an example, display 14 may include red pixels thatemit red light, green pixels that emit green light, and blue pixels thatemit blue light. Configurations for display 14 that include pixels ofother colors may be used, if desired. The use of a pixel arrangementwith red, green, and blue pixels is merely illustrative.

As shown in the example of FIG. 3, display substrate 24 may have a tailportion such as tail 24T that has a narrower width than the portion ofsubstrate 24 that contains active area AA. This arrangement helpsaccommodate tail 24T within the housing of device 10. Tail 24T may, ifdesired, be bent under the rest of display 14 when display 14 is mountedwithin an electronic device housing.

Display driver circuitry 20 for display 14 may be mounted on a printedcircuit board that is coupled to tail portion 24T or may be mounted ontail portion 24T. Signal paths such as signal path 26 may couple displaydriver circuitry 20 to control circuitry 16. Circuitry 20 may includeone or more display driver integrated circuits and/or thin-filmtransistor circuitry. During operation, the control circuitry of device10 (e.g., control circuitry 16 of FIG. 1) may supply circuitry such asdisplay driver circuitry 20 with information on images to be displayedon display 14. To display the images on display pixels 22, displaydriver circuitry 20 may supply corresponding image data to data lines Dwhile issuing clock signals and other control signals to supportingdisplay driver circuitry such as gate driver circuitry 18. Gate drivercircuitry 18 may produce gate line signals (sometimes referred to asscan signals, emission enable signals, etc.) or other control signalsfor pixels 22. The gate line signals may be conveyed to pixels 22 usinglines such as gate lines G. There may be one or more gate lines per rowo pixels 22. Gate driver circuitry 18 may include integrated circuitsand/or thin-film transistor circuitry and may be located along the edgesof display 14 (e.g., along the left and/or right edges of display 14 asshown in FIG. 3) or elsewhere in display 14 (e.g., as part of circuitry20 on tail 24T, along the lower edge of display 14, etc.). Theconfiguration of FIG. 3 is merely illustrative.

Display driver circuitry 20 may supply data signals onto a plurality ofcorresponding data lines D. With the illustrative arrangement of FIG. 3,data lines D run vertically through display 14. Data lines D areassociated with respective columns of pixels 22.

With the illustrative configuration of FIG. 3, gate lines G (sometimesreferred to as scan lines, emission lines, etc.) run horizontallythrough display 14. Each gate line G is associated with a respective rowof display pixels 22. If desired, there may be multiple horizontalcontrol lines such as gate lines G associated with each row of pixels22. Gate driver circuitry 18 may assert gate line signals on the gatelines G in display 14. For example, gate driver circuitry 18 may receiveclock signals and other control signals from display driver circuitry 20and may, in response to the received signals, assert a gate signal ongate lines G in sequence, starting with the gate line signal G in thefirst row of display pixels 22. As each gate line is asserted, data fromdata lines D is loaded into the corresponding row of display pixels. Inthis way, control circuitry in device 10 such as display drivercircuitry 20 may provide pixels 22 with signals that direct pixels 22 togenerate light for displaying a desired image on display 14.

The circuitry of pixels 22 and, if desired, display driver circuitrysuch as circuitry 18 and/or 20 may be formed using thin-film transistorcircuitry. Thin-film transistors in display 14 may, in general, beformed using any suitable type of thin-film transistor technology (e.g.,silicon transistors such as polysilicon thin-film transistors,semiconducting-oxide transistors such as indium gallium zinc oxidetransistors, etc.).

Conductive paths (e.g., one or more signal lines, blanket conductivefilms, and other patterned conductive structures) may be provided indisplay 14 to route data signals D and power signals such as positivepower supply signal ELVDD and ground power supply signal ELVSS to pixels22. As shown in FIG. 3, these signals may be provided to pixels 22 inactive area AA using signal routing paths that receive signals D, ELVDD,and ELVSS from tail portion 24T of display 14.

A cross-sectional side view of a portion of active area AA of display 14showing an illustrative configuration that may be used for formingpixels 22 is shown in FIG. 4. As shown in FIG. 4, display 14 may have asubstrate such as substrate 24. Thin-film transistors, capacitors, andother thin-film transistor circuitry 50 (e.g., pixel circuitry such asthe illustrative pixel circuitry of FIG. 2) may be formed on substrate24. Pixel 22 may include organic light-emitting diode 38. Anode AN ofdiode 38 may be formed from metal layer 58 (sometimes referred to as ananode metal layer). Each diode 38 may have a cathode CD from conductivecathode structures such as cathode layer 60. Layer 60 may be, forexample, a thin layer of metal such as a layer of magnesium silver witha thickness of 10-18 nm, more than 8 nm, less than 25 nm, etc. Layer 60may cover all of pixels 22 in active area AA of display 14 and may haveportions that extend into inactive area IA display 14 (e.g., so thatlayer 60 is coupled to ground power supply paths that supply layer 60with ground power supply voltage ELVSS).

Each diode 38 has an organic light-emitting emissive layer (sometimesreferred to as emissive material or an emissive layer structure) such asemissive layer 56. Emissive layer 56 is an electroluminescent organiclayer that emits light 40 in response to applied current through diode38. In a color display, emissive layers 56 in the array of pixels in thedisplay include red emissive layers for emitting red light in redpixels, green emissive layers for emitting green light in green pixels,and blue emissive layers for emitting blue light in blue pixels. Inaddition to the emissive organic layer in each diode 38, each diode 38may include additional layers for enhancing diode performance such as anelectron injection layer, an electron transport layer, a hole transportlayer, and a hole injection layer. Layers such as these may be formedfrom organic materials (e.g., materials on the upper and lower surfacesof electroluminescent material in layer 56).

Layer 52 (sometimes referred to as a pixel definition layer) has anarray of openings containing respective portions of the emissivematerial of layer 56. An anode AN is formed at the bottom of each ofthese openings and is overlapped by emissive layer 56. The shape of thediode opening in pixel definition layer 52 therefore defines the shapeof the light-emitting area for diode 38.

Pixel definition layer 52 may be formed from a photoimageable materialthat is photolithographically patterned (e.g., dielectric material thatcan be processed to form photolithographically defined openings such asphotoimageable polyimide, photoimageable polyacrylate, etc.), may beformed from material that is deposited through a shadow mask, or may beformed from material that is otherwise patterned onto substrate 24. Thewalls of the diode openings in pixel definition layer may, if desired,be sloped, as shown by sloped sidewalls 64 in FIG. 4.

Thin-film circuitry 50 may contain transistor such as illustrativetransistor 32. Thin-film transistor circuitry such as illustrativethin-film transistor 32 of FIG. 4 may have active areas (channelregions) formed from a patterned layer of semiconductor such as layer70. Layer 70 may be formed from a semiconductor layer such as a layer ofpolysilicon or a layer of a semiconducting-oxide material (e.g. indiumgallium zinc oxide). Source-drain terminals 72 may contact opposing endsof semiconductor layer 70. Gate 76 may be formed from a patterned layerof gate metal or other conductive layer and may overlap semiconductor70. Gate insulator 78 may be interposed between gate 76 andsemiconductor layer 70. A buffer layer such as dielectric layer 84 maybe formed on substrate 24 under shield 74. A dielectric layer such asdielectric layer 82 may cover shield 74. Dielectric layer 80 may beformed between gate 76 and source-drain terminals 72. Layers such aslayers 84, 82, 78, and 80 may be formed from dielectrics such as siliconoxide, silicon nitride, other inorganic dielectric materials, or otherdielectrics. Additional layers of dielectric such as organicplanarization layers PLN1 and PLN2 may be included in thin-filmtransistor structures such as the structures of transistor 32 and mayhelp planarize display 14.

Display 14 may have multiple layers of conductive material embedded inthe dielectric layers of display 14 such as metal layers for routingsignals through pixels 22. Shield layer 74 may be formed from a firstmetal layer (as an example). Gate layer 76 may be formed from a secondmetal layer. Source-drain terminals such as terminals 72 and otherstructures such as signal lines 86 may be formed from portions of athird metal layer such as metal layer 89. Metal layer 89 may be formedon dielectric layer 80 and may be covered with planarization dielectriclayer PLN1. A fourth layer of metal such as metal layer 91 may be usedin forming diode via portion 88 and signal lines 90. In active area AA,a fifth layer of metal such as anode metal layer 58 may form anodes ANof diodes 38. The fifth metal layer in each pixel may have a portionsuch as via portion 58P that is coupled to via portion 88, therebycoupling one of the source-drain terminals of transistor 32 to anode ANof diode 38. A sixth layer of metal (e.g., a blanket film) such ascathode metal layer 60 may be used in forming cathode CD forlight-emitting diode 38. Anode layer 58 may be interposed between metallayer 91 and cathode layer 60. Layers such as layer 58, 91, 89, 76, and74 may be embedded within the dielectric layers of display 14 that aresupported on substrate 24. If desired, fewer metal layers may beprovided in display 14 or display 14 may have more metal layers. Theconfiguration of FIG. 4 is merely illustrative.

It is desirable to minimize ohmic losses (sometimes referred to as IRlosses) when distributing power signals to pixels 22 to ensure thatdisplay 14 operates efficiently and produces images with even brightnessacross display 14. Ohmic losses may be minimized by incorporatinglow-resistance signal pathways into through display 14.

Some of the layers of display 14 such as cathode layer 60 may be thin.Cathode layer 60 may be formed from a metal such as magnesium silver. Toensure that cathode CD is sufficiently thin to be transparent, thethickness of layer 60 may be about 10-18 nm (or other suitablethickness). In this type of configuration, the sheet resistance of layer60 may be relatively large (e.g., about 10 ohm/square). To reduce thesheet resistance of the cathode and thereby allow ground power supplyvoltage ELVSS to be distributed to the cathode terminals of diodes 38 inpixels 22 with minimal IR losses, display 14 may be provided withsupplemental conductive paths. Such paths may also help display 14 ofFIG. 4 (or displays with other types of thin-film stackups) accommodatedisplay geometries with geometries that constrain signal distribution(e.g., displays with rounded corners, etc.).

With one illustrative configuration, portions of metal layer 91 may beused in forming signal paths such as signal paths 90 that serve as asupplemental ELVSS path (i.e., a signal path that can operate inparallel with the ELVSS path formed by cathode layer 60) and therebyhelp to minimize voltage drops and IR losses when operating display 14.Metal layer 91 may be shorted to cathode layer 60 along one or more ofthe edges of display 14 (e.g., along the left, right, and bottom edges,along two or more edges, three or more edges, etc.) and may provide alow resistance path between a source of signal ELVSS on tail 24T andrespective edges of cathode layer 60 (i.e., there may be less resistanceexperienced when distributing a signal to the edge of layer 60 throughsignal lines in layer 91 than when distributing a signal to this portionof layer 60 through the thin metal of layer 60 itself). Reducing IRlosses as power is supplied to layer 60 helps reduce power losses whendriving diodes 38 in active area AA. The use of a portion of layer 91 toform part of the ground power supply path for distributing ELVSS indisplay 14 may also make it possible to reduce the width of inactivearea IA.

FIG. 5 is a cross-sectional side view of a portion of inactive area IAof display 14 showing how a supplemental ELVSS power distribution path(path 90) may be shorted to cathode layer 60 through a portion of thesame metal layer (metal layer 58) that is used in forming anodes AN inactive area AA. As shown in FIG. 5, cathode layer 60 may be coupled toanode metal layer 58 through an opening in pixel definition layer 52.Anode metal layer 58 may, in turn, be shorted to a portion of metallayer 91 that forms supplemental path 90 through an opening inplanarization layer PLN2. Peripheral signal lines in inactive area IAsuch as signal lines 86 (e.g., signals lines associated with gate linesignals, signals for gate driver circuitry 18, and/or other signals fordisplay 14) may be formed from portion of metal layer 89 under path 90.Dielectric layer 92 may cover portions of lines 86, if desired. Lines 86may be formed on dielectric layer 80 or other dielectric, which may, inturn, be formed on thin-film circuitry and substrate structures 94 (see,substrate 24 and the dielectric and metal layers of circuitry 50 of FIG.4). With the arrangement of FIG. 5, ELVSS path 90 may be stacked on topof other signal lines such as lines 86, which allows the width ofinactive area IA to be minimized.

FIG. 6 is a top view of display 14 showing how ELVSS path 90 may be havea mesh shape with openings to accommodate anodes AN. ELVSS path 90 maybe shorted to cathode 60 along edges 96 of display 14, using shortingpaths of the type shown in FIG. 5 and may, if desired, be shorted tocathode 60 using vias in active area AA. When supplemental ground powersupply paths such as the mesh-shaped path (metal power supply mesh path)90 of FIG. 6 are included in display 14, the sheet resistance of theground path for ground power supply signal ELVSS may be reduced (e.g.,to less than 0.1 ohm/square or other suitable value). If desired,supplemental ground paths 90 for signal ELVSS may have non-mesh shapes(e.g., paths 90 may include vertical lines, horizontal lines, L-shapedsegments, combinations of horizontal and vertical lines, sparse meshes,dense meshes, combinations of mesh structures and non-mesh structures,or other suitable shapes). The mesh shape for path 90 of FIG. 6 ismerely illustrative.

As illustrated in FIG. 7, display 14 may have features such as roundedcorners that limit the amount of space available for signal paths. Inthis type of situation, strips of metal for path 90 may extend alongedges 96 and may be shorted to cathode layer 60. At corners 98, theremay not be sufficient room to form peripheral strips of metal layer 91.Nevertheless, due to the presence of the mesh-shaped portions of metallayer 91 (i.e., the mesh shaped portions of path 90), there will be alow resistance path for ELVSS (e.g., a path that shorts the strip ofmetal associated with path 90 on the lower edges 96 of display 14 to thestrips of metal associated with path 90 on the left and right edges ofdisplay 14, etc.). If desired, ELVDD paths in display 14 may be providedwith mesh-shaped metal traces (e.g., portions of the metal traces thatare used in forming gate metal layer 76, source-drain layer 86, sourcedrain layer 90, anode metal layer 58, and/or cathode metal layer 60 maybe used in forming a low-resistance mesh-shaped positive power supplydistribution path for ELVDD such as a path having a shape of the typeshown by the ELVSS traces of FIG. 6). For example, a mesh such as themesh shaped portions of path 90 (a metal power supply mesh path) may beused as an ELVDD path.

FIGS. 8, 9, and 10 show illustrative patterns for forming ELVSS andELVDD distribution lines from tail portion 24T to the lower edge 96 ofdisplay 14. With arrangements such as these in which power lines ELVDDand ELVSS are routed along the center of tail 24T, power routing may beperformed away from dimension-constrained portions of display 14 such ascorners 98.

FIGS. 11, 12, 13, 14, 15, 16, and 17 show illustrative arrangements fordistributing positive power supply voltage ELVDD and ground power supplyvoltage ELVSS at corners 98 of display 14. As shown in FIG. 11, loweredge 96 of display 14 may be provided with horizontal ELVSS distributionpath 100H (e.g., a strip of metal that runs along the lower edge ofdisplay 14) and vertical edges 96 of display 14 may be provided withvertical ELVSS distribution paths (e.g., strips of metal that run alongthe left and right edges of display 14) such as path 100V.

Paths 100H and 100V may be formed from metal layer 89. There may be agap between paths 100H and 100V at corners 98 of display 14 (e.g.,display 14 and substrate 24 may have rounded corners that limit thespace available for power supply distribution at corners 98). UsingL-shaped paths formed from portions of metal layer 91 at corners 98 andother conductive paths, path 100H may be shorted to each path 100V. Forexample, metal layer 91 may have a portion such as portion 90-1 that isshorted to path 100H, connections 90-3 that short metal layer 91 tometal layer 89 in path 100V, and L-shaped segments 90-2 that shortportion 90-1 to respective connection points 90-3. Positive power supply(ELVDD) path 102H (e.g., a positive power supply strip-shaped pathformed from a strip of metal that runs parallel to one of the strips ofmetal that form the ELVSS paths along the edges of display 14) may beshorted directly to some vertical ELVDD distribution paths such asvertical lines 104-1 (formed in layer 89). Other vertical ELVDDdistribution paths such as vertical lines 104-2 are disconnected frompath 102H at corners 98 due to the rounded shape of display 14 atcorners 98, but can be reconnected to path 102H using L-shaped pathportions such as path 90-5 that are coupled between contacts on path102H (see, e.g., contact 90-4) and contacts 90-6 that short metal layer91 of L-shaped paths 90-5 to metal layer 89 of vertical lines 104.L-shaped paths may be used in distributing ELVSS, L-shaped paths may beused in distributing ELVDD (e.g., in configurations in which amesh-shaped ELVDD path is used in display 14, configurations in whichmetal strips such as paths 100H and 100V are used as part of an ELVDDpath, and/or in other configurations).

FIGS. 12 and 13 are cross-sectional side views of display 14 of FIG. 11taken along lines A′-A and B′-B, respectively. As shown in FIGS. 12 and13, planarization layer material (e.g., planarization layer PLN1) mayseparate the metal layer 91 of segments 90-2 and segments 90-5 frommetal lines in layer 89.

In the illustrative arrangement of FIG. 14, path 100H and path 102H havebeen formed from two layers of metal (89 and 91). The cross-sectionalside views of FIGS. 15, 16, and 17 (corresponding to cross-sectionalstaken along A-A′, B-B′, and C-C′ of FIG. 14, respectively) show howplanarization layer PLN1 may be used to separate upper metal layer 91 insegments 90-2 and 90-5 from underlying metal lines. If desired, thepaths formed from segments 90-2 and/or segments 90-5 may be implementedusing mesh-shaped paths, as shown in FIG. 18.

Data line distribution paths near corners 98 may be constrained forspace due to the shape of corners 98. Data lines D may be accommodatedat corners 98 by using a ladder shape (staircase shape) for data lines Dat corners 98, as shown by staircase-shaped data line portions D′ ofdata lines D in FIG. 19. At the transition between the main portion ofsubstrate 24 and tail portion 24T of substrate 24, data lines portionsD″ may extend diagonally.

FIG. 20 is a cross-sectional side view of a portion of display 14 withpixels 22 of multiple colors (see, e.g., red pixel 22R, green pixel 22G,and blue pixel 22B). In this illustrative configuration of display 14,each pixel has an anode AN formed from layer 58, a hole injection layer(HIL) that is formed from a blanket film, first hole transport layerHTL1 (a partially common layer), second hole transport layer HTL2 (ablanket film common to all pixels), emissive material EML, a commonelectron transport layer (ETL), a cathode CD including blanket cathodelayer 60, and a capping layer CPL (e.g., a tuning layer of about 70 nmin thickness or other suitable thickness).

FIG. 21 is a top view of an active area of display 14 in an illustrativeconfiguration in which display 14 has pixels such as pixels 22R, 22G,and 22B of FIG. 20. As shown in FIG. 21, blanket cathode metal layer 60may overlap all of the pixels in the active area of display 14. Layer 60may be formed from a metal such as magnesium silver or other suitablemetal and may be sufficiently thin (e.g., 10-18 nm, more than 8 nm, lessthan 25 nm, etc.) to be transparent to light 40 emitted by diodes 38 inthe pixels. Layer 60 may be used to distribute ground power supplyvoltage ELVSS to cathodes CD of diodes 38. Due to the relatively smallthickness of layer 60, layer 60 may have a relatively high sheetresistance (e.g., about 10 ohm/square). To reduce the sheet resistanceof the cathode layer in the arrangement of FIG. 21, supplemental cathodepaths such as metal lines 128 (e.g., vertical and/or horizontal lines)may be incorporated into the cathode. Lines 128 may be deposited usingany suitable metal deposition technique. For example, lines 128 may bedeposited using a laser deposition system in which metal for lines 128is ablated from a target and redeposited onto the exposed surface ofcathode layer 60 in a vacuum chamber.

FIG. 22 is a cross-sectional side view of display 14 taken along line120 and viewed in direction 122. As shown in FIG. 22, light-emittingdiode 38 may have an anode AN and cathode CD. Cathode CD may be formedfrom a portion of blanket cathode metal layer 60. Supplemental lines 128(e.g., horizontal and/or vertical supplemental lines that form a meshpattern or other suitable pattern) may be formed on layer 60 and shortedto layer 60 and may therefore reduce the sheet resistance of the cathodepath being used to distribute ground power supply voltage ELVSS tolight-emitting diodes 28. With one illustrative arrangement, thethickness D1 of layer 60 is about 10-18 nm (e.g., more than 8 nm, lessthan 25 nm, etc.) and the thickness D2 of line 128 is 10 times greaterthan D1 (e.g., D2 may be 5 times D1 or more, may be 20 times D1 or less,etc.).

FIGS. 23 and 24 show how a laser deposition system may be used todeposit metal lines 128 onto metal layer 60. As shown in FIG. 23, atarget such as target 130 may be placed adjacent to the surface ofdisplay 14 after cathode metal layer 60 has been deposited over thesurface of display 14. Target 130 may include a transparent substrate(e.g., glass) such as transparent substrate 134, a layer of heatabsorbing material such as layer 136, and a layer of high conductivitymaterial such as layer 138. Heat absorbing layer 136 may be formed fromlow-reflectivity metals (e.g., molybdenum, tungsten, etc.) or othersuitable materials that absorb laser beam 140 when laser beam 140 isemitted by laser 132. Laser beam 140 may include ultraviolet light,visible light, and/or infrared light and may be have a diameter of 1-1.2microns, more than 1 micron, less than 5 microns, or other suitablesize. Beam 140 may be a pulsed laser beam (e.g., a beam having a pulsewidth of 1 fs to 100 ps or more than 100 ps) to facilitate heating ofthe illuminated portion of heat absorbing layer 136. Layer 138 may beformed from a highly conductive metal such aluminum, zinc, magnesium,silver, etc. Configurations in which more than two layers of metal oronly a single layer of metal are formed on substrate 134 may also beused.

As shown in FIG. 24, when laser 132 applies laser light 140 to target130, portions 138′ and 136′ of layers 138 and 136 are heated andportions 138′ and 136′ are ablated or otherwise removed from target 130and redeposited on adjacent portions of layer 60 in display 14. Thedeposited metal of portions 138′ and 136′ forms conductive line 128 tohelp reduce the sheet resistance of the conductive structure (i.e., thecathode layer) that is used in distributing ground voltage ELVSS todiodes 38.

FIGS. 25, 26, 27, and 28 are top views of display 14 showingillustrative patterns that may be used for supplemental cathode lines128 (e.g., laser-deposited metal lines). Lines 128 may have a uniformvertical or horizontal layout (see, e.g., illustrative vertical lines128 of FIG. 25), may have a non-uniform vertical or horizontal layout(see, e.g., illustrative vertical lines 128 of FIG. 25), or may haveuniform (FIG. 27) or non-uniform (FIG. 28) mesh shapes. Other patternsor combinations of these patterns may be used in forming lines 128 ifdesired and may be used in combination with cathode structures formedfrom metal layer 91 (e.g., paths 90 of FIG. 6). The configurations ofFIGS. 25, 26, 27, and 28 are merely illustrative.

FIG. 29 is a diagram showing how gate driver circuitry 18 may haveregions of circuitry for driving horizontal control signals (gatesignals) onto horizontal gate lines G of display 14. As shown in FIG.29, for example, gate driver circuitry 18 may have blocks of gate drivercircuitry such as gate driver row blocks 150 that are interconnectedusing paths 158. Each gate driver row block 150 may include circuitrysuch as output buffers and other output driver circuitry 152, registercircuits 154 (e.g., registers that can be chained together by paths 158to form a shift register), and paths 156 (e.g., signal lines, powerlines, and other interconnects). Each gate driver row block 150 maysupply one or more gate signals to one or more respective gate lines ina corresponding row of the pixels of the array of pixels in the activearea of display 14.

FIG. 30 shows how gate driver row blocks 150 may be laterally offset(e.g., by providing blocks 150 with varying horizontal offsets DX alonga dimension parallel to the horizontal axis along which gate lines Grun) and/or may be rotated into different angular orientations (e.g., byrotating blocks 150 so that they have angular orientations with varyingangular offsets DA) to accommodate curved edge 98 of display substrate24. Gate driver circuitry with laterally varying gate driver row blockpositions and/or angularly varying gate driver row block orientationsmay include a unique lateral position and/or angular orientation foreach block 150 or may use a set of two or more different lateralpositions and/or angular orientations to enhance the ability of gatedriver circuitry 18 to accommodate curved display substrate edges.Control signals (e.g., clocks signals and other timing signals) may besupplied to gate driver circuitry using gate driver circuitry controllines such as lines 18L that extend along tail portion 24T of substrate24.

As shown in FIG. 31, data lines D may have L-shaped data line extensionssuch as extension 170 that help distribute data signals to vertical datalines D that are located at curved corner 98 of display substrate 24without consuming excessive inactive border area. Extensions 170 may beformed in the active area of display 14. As shown in FIG. 31, forexample, data lines D on tail 24L may include diagonal data linesegments such as segments 164 and 166. Segments 164 and 166 may beformed from the same layer of metal or may be patterned from two or moredifferent metal layers. As an example, alternate diagonal segments suchas segments 164 and 166 may be formed from respective first and secondgate metal layers to enhance packing density. Data line portions 164 and166 may be coupled to vertical data line portions such as lines D thatare formed in a metal layer such as second source-drain metal layer 91using vias 162. Pixels 22 may include vias such as illustrative via 160to connect data lines formed from metal layer 91 (i.e., D (metal layer91) of FIG. 31) to internal paths in pixels 22 formed from metal layer89 (i.e., source and drains for transistors in pixels 22). Power linesformed from metal layer 89 may be interleaved with data lines D (metallayer 91). L-shaped extensions 170 may be formed from metal layer 91 andmay overlap the corner of the active area of display 14, so as not tointrude into the inactive area along the edge of the substrate ofdisplay 14.

FIG. 32 is a diagram showing how display driver circuitry such as gatedriver row blocks 150 may have different shapes in different rows toaccommodate curved display substrate edges such as the curved portion ofsubstrate 24 at corner 98. As shown in FIG. 32, blocks 150 may, forexample, be rectangular blocks of assorted shapes with varying aspectratios (i.e., the vertical dimension divided by the horizontal dimensionof each block 150 may potentially differ). As an example, some of blocks150 may have relatively small aspect ratios (see, e.g., the block havingsmall height A1 and large width B1) whereas other blocks 150 may haverelatively large aspect ratios (see, e.g., the block having moderateheight A2 and moderate width B2). Circuitry 152, 154, and 158 in blocks150 can be arranged to accommodate custom footprints (outlines whenviewed from above) for each block 150 or for each set of blocks 150. Ingeneral, any suitable type of customization of blocks 150 may beimplemented around curved display edges such as corner 98 (e.g., shapecustomization, lateral offset customization, angular orientationcustomization, size customization, circuit component customization,etc.). Blocks 150 may each be customized or sets of blocks may becustomized to accommodate the curved display substrate edge.

Testing circuitry may be implemented on display 14. For example, testingmultiplexer circuitry such as testing multiplexer circuitry 176 of FIG.33 may be provided along the upper or lower edge of display 14.Circuitry 176 may be used to route a relatively small number of testsignals onto a relatively large number of data lines to facilitate pixeltesting during manufacturing. During testing, switches SW may beselectively operated to provide test data to data lines D in display 14.For example, switches SW of circuitry 176 may be opened and closed toroute test data for red data lines D(R) such as TESTDATARED to red datalines D(R), to route test data for green data lines D(G) such asTESTDATAGREEN to green data lines D(G), and to route test data for bluedata lines D(B) such as TESTDATABLUE) to blue data lines D(B). LinesD(R) may be used to route data to red pixels, lines D(G) may beassociated with green pixels, and lines D(B) may be coupled to the bluepixels of display 14.

Test data may by supplied to display 14 from tester that is coupled totest pads on substrate 24 and/or from circuitry attached to substrate24. External tester schemes may be used when it is desired to performtesting before attaching a display driver integrated circuit tosubstrate 24. Test lines may route signals (e.g., TESTDATARED,TESTDATAGREEN, TESTDATABLUE and three corresponding multiplexer controlsignals for the red, green, and blue switches in switches SW) betweenthe test pads and testing circuitry such as circuitry 176. Circuitry 176may be controlled by an external test circuit or other controller sothat data lines of different colors can receive test data in desiredpatterns. This allows pixels 22 of different colors in display 14 to beindependently tested. When testing is complete, switches SW can be leftpermanently opened so that the data lines D in display 14 are notshorted together and can be used normally to route data signals topixels 22.

FIG. 34 is a diagram of an illustrative display with testing circuitry.As shown in FIG. 34, testing multiplexer circuitry 176 and test pads 174may be located on opposing edges of display 14. For example, test pads174 may be located on tail portion 24L of substrate 24 at the lower edgeof display 14 and testing multiplexer circuitry 176 may be located alongthe upper edge of display 14. Test signal lines 172 may be used to routetest signals between test pads 174 on the lower edge of display 14 totesting multiplexer circuitry 176 along the upper edge of display 14.

As shown in the illustrative configuration of FIG. 35, testingmultiplexing circuitry 176 may be located along the lower edge of tailportion 24T of substrate 24 adjacent to pads 174. Following testing,testing multiplexing circuitry 176 and pads 174 may be removed from tail24T (e.g., by cutting off circuitry 176 and pads 174 using a cut formedin tail 24T along cut line 180 of FIG. 35).

FIGS. 36 and 37 show how multiplexer testing circuitry 176 may beaccommodated along a curved portion of display 14. In the illustrativearrangement of FIG. 36, circuitry 176 is formed within a curved andtapered region along the curved edge of the active area of display 14between blocks 150 of gate driver circuitry 18 and data lines D. FIG. 37shows an illustrative configuration in which regions of testingmultiplexer circuitry 176 such as testing multiplexer circuit blocks176B are interspersed with regions of gate driver circuitry 18 such asgate driver row blocks 150. By placing blocks 176B between respectivepairs of blocks 150, gate driver circuitry 18 and testing multiplexercircuitry 176 may be efficiently packed along the edge of the activearea. This helps minimize the width of the inactive area along the edgeof substrate 24 in which display driver circuitry 18 and testingmultiplexer circuitry 176 are formed. Testing multiplexer circuit blocks176B may have varying location-dependent shapes (e.g., different sizes,aspect ratios, etc.), angular orientations, and/or lateral positionsalong a dimension parallel to gate lines G, as described in connectionwith gate driver circuitry 18 of FIG. 30 to help enhance the layout ofthe circuitry in the inactive area of display 14. Other arrangements inwhich regions of texting multiplexer circuitry 176 are located betweenregions of gate driver circuitry 18 or are otherwise arranged to helpaccommodate curved display substrate edges may be used, if desired. Theconfiguration of FIG. 37 is illustrative.

In accordance with an embodiment, an organic light-emitting diodedisplay having an active area with an array of pixels is provided thatincludes a substrate, thin-film transistor circuitry on the substratethat includes dielectric layers, a pixel definition layer on thethin-film transistor circuitry, the pixel definition layer has openingseach of which contains an organic emissive layer for an organiclight-emitting diode and each of which is associated with a respectiveone of the pixels, and a cathode layer that covers the array of pixels,and a metal ground power supply path embedded within dielectric layersin the active area, the metal ground power supply path carries a groundpower supply voltage to the cathode layer.

In accordance with another embodiment, the metal ground power supplypath is formed from a first portion of a metal layer and a secondportion of the metal layer forms via structures that contactsource-drain terminals of transistors in the thin-film transistorcircuitry.

In accordance with another embodiment, the metal ground power supplypath or positive power supply path has a mesh shape.

In accordance with another embodiment, the active area has roundedcorners and the metal ground power supply path or positive power supplypath forms a mesh with rounded corners.

In accordance with another embodiment, the metal ground power supplypath or positive power supply path includes L-shaped portions.

In accordance with another embodiment, the organic light-emitting diodedisplay includes first and second patterned metal layers embedded in thedielectric layers, the metal ground power supply path includes metalsegments formed from the second patterned metal layer and the firstpatterned metal layer includes strips of metal that carry the groundpower supply voltage.

In accordance with another embodiment, the display has edges and thestrips of metal run along at least some of the edges.

In accordance with another embodiment, the first patterned metal layerincludes a positive power supply strip of metal that runs parallel toone of the strips of metal that carry the ground power supply voltage.

In accordance with another embodiment, the metal segments includeL-shaped portions and at least some of the L-shaped portions cross overthe positive power supply strip of metal.

In accordance with another embodiment, the organic light-emitting diodedisplay includes positive power supply distribution paths that extend tothe pixels across the active area from the positive power supply stripof metal.

In accordance with another embodiment, the active area has roundedcorners and the L-shaped portions are located at the rounded corners.

In accordance with another embodiment, source-drain terminals fortransistors in the thin-film transistor circuitry are formed from afirst metal layer embedded in the dielectric layers and the metal groundpower supply path is formed from a second metal layer embedded in thedielectric layers.

In accordance with another embodiment, anodes for the organiclight-emitting diodes are formed from a third metal layer that isembedded in the dielectric layers and that is interposed between thesecond metal layer and the cathode layer.

In accordance with another embodiment, a portion of the third metallayer shorts the metal ground power supply path formed from the secondmetal layer to the cathode layer.

In accordance with another embodiment, the metal ground power supplypath includes laser-deposited metal lines.

In accordance with another embodiment, the organic light-emitting diodelayer includes data lines that supply data to the pixels, the data linesinclude staircase-shaped portions.

In accordance with an embodiment, an organic light-emitting diodedisplay having an array of pixels is provided that includes a substrate,a layer of thin-film transistor circuitry on the substrate, a pixeldefinition layer on the layer of thin-film transistor circuitry, thepixel definition layer has openings each of which contains an organicemissive layer for an organic light-emitting diode and each of which isassociated with a respective one of the pixels, a cathode layer thatcovers the array of pixels and that distributes a ground power supplyvoltage to the organic light-emitting diode in each of the openings, anda patterned metal mesh that is shorted to the cathode layer and thathelps distribute the ground power supply voltage.

In accordance with another embodiment, the patterned metal mesh includeslaser-deposited metal lines on the cathode layer.

In accordance with another embodiment, the cathode layer is formed froma first layer of metal, the patterned metal mesh is formed from a secondlayer of metal, and anodes for the organic light-emitting diodes areformed from a third layer of metal that is interposed between the firstand second layers of metal.

In accordance with another embodiment, the organic light-emitting diodedisplay includes laser-deposited metal lines on the cathode layer.

In accordance with another embodiment, the substrate has roundedcorners.

In accordance with another embodiment, the organic light-emitting diodedisplay includes data lines that distribute data signals to the pixels,the data lines include portions with staircase shapes.

In accordance with an embodiment, an organic light-emitting diodedisplay having an array of pixels is provided that includes a substrate,a layer of thin-film transistor circuitry having dielectric layers onthe substrate, a pixel definition layer on the layer of thin-filmtransistor circuitry, the pixel definition layer has openings each ofwhich contains an organic emissive layer for an organic light-emittingdiode and each of which is associated with a respective one of thepixels, and a cathode layer that covers the array of pixels, the cathodelayer receives a ground power supply voltage and distributes the groundpower supply voltage to the organic emissive layers in the openings, afirst metal layer embedded in the dielectric layers that formssource-drain terminals for thin-film transistors in the layer ofthin-film transistor circuitry, a second metal layer embedded in thedielectric layers that is patterned to carry the ground power supplyvoltage to the cathode layer, and a third metal layer that has a firstportion that is patterned to form anodes for the organic light-emittingdiodes and a second portion that shorts the second metal layer to thecathode layer.

In accordance with another embodiment, the substrate has curved edges.

In accordance with another embodiment, the organic light-emitting diodedisplay includes data lines that convey data to the array of pixels,gate lines that extend perpendicular to the data lines, and gate drivercircuitry formed from the thin-film transistor circuitry, the gatedriver circuitry has gate driver row blocks that are each coupled to atleast a respective one of the gate lines.

In accordance with another embodiment, the gate driver row blocksinclude gate driver row blocks of different aspect ratios.

In accordance with another embodiment, the organic light-emitting diodedisplay includes testing multiplexer circuitry including blocks oftesting multiplexer circuitry between respective pairs of the gatedriver row blocks.

In accordance with an embodiment, an organic light-emitting diodedisplay is provided that includes thin-film transistor circuitry, asubstrate having an active area with an array of pixels formed from aportion of the thin-film transistor circuitry and having an inactivearea that is free of pixels and that runs along an edge of the activearea adjacent to an edge of the substrate, data lines that supply datato the array of pixels, gate lines that run perpendicular to the datalines and that supply control signals to the array of pixels, and gatedriver circuitry in the inactive area this is formed from a portion ofthe thin-film transistor circuitry, the gate driver circuitry runs alonga curved portion of the edge of the substrate.

In accordance with another embodiment, the gate driver circuitry has aplurality of gate driver row blocks each of which is coupled to at leastone of the gate lines in a respective row of pixels in the array ofpixels.

In accordance with another embodiment, the gate driver row blocksinclude first and second gate driver row blocks with different shapes inrespective first and second rows of the pixels.

In accordance with another embodiment, the gate driver row blocksinclude first and second gate driver row blocks with different angularorientations in respective first and second rows of the pixels.

In accordance with another embodiment, the gate driver row blocksinclude gate driver row blocks in different rows of the pixels that areoffset by different amounts along a dimension running parallel to thegate lines so that the gate driver row blocks accommodate the curvedportion of the edge of the substrate.

In accordance with another embodiment, the organic light-emitting diodedisplay includes testing multiplexer circuitry that is coupled to thedata lines.

In accordance with another embodiment, the testing multiplexer circuitryruns along at least part of the curved portion of the edge of thesubstrate.

In accordance with another embodiment, the testing multiplexer circuitryincludes regions of testing circuitry between the gate driver rowblocks.

In accordance with another embodiment, the data lines include L-shapeddata line portions.

In accordance with another embodiment, the data lines have data lineportions extending perpendicular to the gate lines and some of the datalines each have a diagonal portion and an L-shaped extension couplingthe diagonal portion to a respective one of the data line portionsextending perpendicular to the gate lines.

In accordance with an embodiment, an organic light-emitting diodedisplay is provided that includes thin-film transistor circuitry, asubstrate having an active area with an array of pixels formed from aportion of the thin-film transistor circuitry and having an inactivearea that is free of pixels and that runs along an edge of the activearea adjacent to an edge of the substrate, gate driver circuitry formedfrom a portion of the thin-film transistor circuitry in the inactivearea, gate lines that supply control signals to the array of pixels fromthe gate driver circuitry, and data lines that supply data to the arrayof pixels, the data lines have data line portions extendingperpendicular to the gate lines and some of the data lines each have adiagonal portion and an L-shaped extension coupling the diagonal portionto a respective one of the data line portions extending perpendicular tothe gate lines.

In accordance with another embodiment, the edge of the substrate has acurved portion, the organic light-emitting diode display includes powersupply lines having L-shaped segments that overlap the active area.

In accordance with another embodiment, the gate driver circuitryincludes a plurality of gate driver row blocks each of which supplies atleast one of the control signals to a respective one of the gate lines,the gate driver row blocks include gate driver row blocks with differentshapes along the curved portion.

In accordance with another embodiment, the gate driver circuitryincludes a plurality of gate driver row blocks each of which supplies atleast one of the control signals to a respective one of the gate lines,the gate driver row blocks include gate driver row blocks with differentangular orientations along the curved portion.

The foregoing is merely illustrative and various modifications can bemade to the described embodiments. The foregoing embodiments may beimplemented individually or in any combination.

What is claimed is:
 1. An organic light-emitting diode display having anactive area with an array of pixels, comprising: a substrate; thin-filmtransistor circuitry on the substrate that includes dielectric layers; apixel definition layer on the thin-film transistor circuitry, whereinthe pixel definition layer has openings each of which contains anorganic emissive layer for an organic light-emitting diode and each ofwhich is associated with a respective one of the pixels; and a cathodelayer that covers the array of pixels; and a metal power supply meshpath embedded within dielectric layers in the active area, wherein theactive area has rounded corners and wherein the metal power supply meshpath is arranged within the rounded corners.
 2. The organiclight-emitting diode display defined in claim 1, wherein the metal powersupply mesh path is a metal ground power supply path that carries aground power supply voltage to the cathode layer, wherein the metalground power supply path is formed from a first portion of a metallayer, and wherein a second portion of the metal layer forms viastructures that contact source-drain terminals of transistors in thethin-film transistor circuitry.
 3. The organic light-emitting diodedisplay defined in claim 1, wherein the metal power supply mesh path isa metal positive power supply path that carries a positive power supplyvoltage.
 4. The organic light-emitting diode display defined in claim 1further comprising L-shaped path segments coupled to the metal powersupply mesh path.
 5. The organic light-emitting diode display defined inclaim 1 further comprising first and second patterned metal layersembedded in the dielectric layers, wherein the metal power supply meshpath is coupled to metal segments formed from the second patterned metallayer and wherein the first patterned metal layer includes strips ofmetal that carry the power supply voltage.
 6. The organic light-emittingdiode display defined in claim 5, wherein the display has edges andwherein the strips of metal run along at least some of the edges.
 7. Theorganic light-emitting diode display defined in claim 6 wherein thefirst patterned metal layer includes a positive power supply strip ofmetal that runs parallel to one of the strips of metal that carry thepower supply voltage and wherein the metal segments include L-shapedportions and wherein at least some of the L-shaped portions cross overthe positive power supply strip of metal.
 8. The organic light-emittingdiode display defined in claim 7 further comprising positive powersupply distribution paths that extend to the pixels across the activearea from the positive power supply strip of metal, wherein the L-shapedportions are located at the rounded corners.
 9. The organiclight-emitting diode display defined in claim 1 wherein source-drainterminals for transistors in the thin-film transistor circuitry areformed from a first metal layer embedded in the dielectric layers andwherein the metal power supply mesh path is formed from a second metallayer embedded in the dielectric layers.
 10. The organic light-emittingdiode display defined in claim 9 wherein anodes for the organiclight-emitting diodes are formed from a third metal layer that isembedded in the dielectric layers and that is interposed between thesecond metal layer and the cathode layer.
 11. The organic light-emittingdiode display defined in claim 10 wherein a portion of the third metallayer shorts the metal power supply mesh path formed from the secondmetal layer to the cathode layer.
 12. The organic light-emitting diodedisplay defined in claim 11 wherein the metal power supply mesh pathcomprises laser-deposited metal lines.
 13. The organic light-emittingdiode layer defined in claim 12 further comprising data lines thatsupply data to the pixels, wherein the data lines includestaircase-shaped portions.
 14. An organic light-emitting diode displayhaving an array of pixels, comprising: a substrate; a layer of thin-filmtransistor circuitry having dielectric layers on the substrate; a pixeldefinition layer on the layer of thin-film transistor circuitry, whereinthe pixel definition layer has openings each of which contains anorganic emissive layer for an organic light-emitting diode and each ofwhich is associated with a respective one of the pixels; and a cathodelayer that covers the array of pixels, wherein the cathode layerreceives a ground power supply voltage and distributes the ground powersupply voltage to the organic emissive layers in the openings; a firstmetal layer embedded in the dielectric layers that forms source-drainterminals for thin-film transistors in the layer of thin-film transistorcircuitry; a second metal layer embedded in the dielectric layers thatis patterned to carry the ground power supply voltage to the cathodelayer; and a third metal layer that has a first portion that ispatterned to form anodes for the organic light-emitting diodes and asecond portion that shorts the second metal layer to the cathode layer,wherein the substrate has curved edges.
 15. The organic light-emittingdiode display defined in claim 14 further comprising: data lines thatconvey data to the array of pixels; gate lines that extend perpendicularto the data lines; and gate driver circuitry formed from the thin-filmtransistor circuitry, wherein the gate driver circuitry has gate driverrow blocks that are each coupled to at least a respective one of thegate lines.
 16. The organic light-emitting diode display defined inclaim 15 wherein the gate driver row blocks include gate driver rowblocks of different aspect ratios.
 17. The organic light-emitting diodedisplay defined in claim 15 further comprising testing multiplexercircuitry including blocks of testing multiplexer circuitry betweenrespective pairs of the gate driver row blocks.
 18. An organiclight-emitting diode display, comprising: thin-film transistorcircuitry; a substrate having an active area with an array of pixelsformed from a portion of the thin-film transistor circuitry and havingan inactive area that runs along an edge of the active area adjacent toan edge of the substrate; data lines that supply data to the array ofpixels; gate lines that run perpendicular to the data lines and thatsupply control signals to the array of pixels; and gate driver circuitryin the inactive area that is formed from a portion of the thin-filmtransistor circuitry, wherein the gate driver circuitry runs along acurved portion of the edge of the substrate.
 19. The organiclight-emitting diode display defined in claim 18 wherein the gate drivercircuitry has a plurality of gate driver row blocks each of which iscoupled to at least one of the gate lines in a respective row of pixelsin the array of pixels.
 20. The organic light-emitting diode displaydefined in claim 19 wherein the gate driver row blocks include first andsecond gate driver row blocks with different shapes in respective firstand second rows of the pixels.
 21. The organic light-emitting diodedisplay defined in claim 19 wherein the gate driver row blocks includefirst and second gate driver row blocks with different angularorientations in respective first and second rows of the pixels.
 22. Theorganic light-emitting diode display defined in claim 19 wherein some ofthe gate driver row blocks in different rows of the pixels are offset bydifferent amounts along a dimension running parallel to the gate linesso that the gate driver row blocks accommodate the curved portion of theedge of the substrate.
 23. The organic light-emitting diode displaydefined in claim 19 further comprising testing multiplexer circuitrythat is coupled to the data lines.
 24. The organic light-emitting diodedisplay defined in claim 23 wherein the testing multiplexer circuitryruns along at least part of the curved portion of the edge of thesubstrate.
 25. The organic light-emitting diode display defined in claim23 wherein the testing multiplexer circuitry comprises regions oftesting circuitry between the gate driver row blocks.
 26. The organiclight-emitting diode display defined in claim 18 wherein the data linescomprise L-shaped data line portions.
 27. The organic light-emittingdiode display defined in claim 18 wherein the data lines have data lineportions extending perpendicular to the gate lines and wherein some ofthe data lines each have a diagonal portion and an L-shaped extensioncoupling the diagonal portion to a respective one of the data lineportions extending perpendicular to the gate lines.
 28. An organiclight-emitting diode display, comprising: thin-film transistorcircuitry; a substrate having an active area with an array of pixelsformed from a portion of the thin-film transistor circuitry and havingan inactive area that is free of pixels and that runs along an edge ofthe active area adjacent to an edge of the substrate, wherein the edgeof the substrate has a curved portion; gate driver circuitry formed froma portion of the thin-film transistor circuitry in the inactive area;gate lines that supply control signals to the array of pixels from thegate driver circuitry; and data lines that supply data to the array ofpixels, wherein the data lines have data line portions extendingperpendicular to the gate lines and wherein some of the data lines eachhave a diagonal portion and an L-shaped extension coupling the diagonalportion to a respective one of the data line portions extendingperpendicular to the gate lines.
 29. The organic light-emitting diodedisplay defined in claim 28 wherein the gate driver circuitry includes aplurality of gate driver row blocks each of which supplies at least oneof the control signals to a respective one of the gate lines, whereinthe gate driver row blocks include gate driver row blocks with differentshapes along the curved portion.
 30. The organic light-emitting diodedisplay defined in claim 28 wherein the gate driver circuitry includes aplurality of gate driver row blocks each of which supplies at least oneof the control signals to a respective one of the gate lines, whereinthe gate driver row blocks include gate driver row blocks with differentangular orientations along the curved portion.